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PHE13009/DG,127

PHE13009/DG,127

PHE13009/DG,127

WeEn Semiconductors

PHE13009/DG,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13009/DG,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 80W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2V @ 1.6A, 8A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 12A
RoHS StatusRoHS Compliant
In-Stock:24693 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.782159$0.782159
10$0.737886$7.37886
100$0.696119$69.6119
500$0.656716$328.358
1000$0.619544$619.544

PHE13009/DG,127 Product Details

PHE13009/DG,127 Overview


This device has a DC current gain of 8 @ 5A 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 1.6A, 8A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

PHE13009/DG,127 Features


the DC current gain for this device is 8 @ 5A 5V
the vce saturation(Max) is 2V @ 1.6A, 8A

PHE13009/DG,127 Applications


There are a lot of WeEn Semiconductors PHE13009/DG,127 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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