DSS5240T-7 Overview
DC current gain in this device equals 210 @ 1A 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a transition frequency of 100MHz in the part.There is a breakdown input voltage of 40V volts that it can take.During maximum operation, collector current can be as low as 2A volts.
DSS5240T-7 Features
the DC current gain for this device is 210 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS5240T-7 Applications
There are a lot of Diodes Incorporated DSS5240T-7 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
