NSVMMBT5401WT1G Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 100MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
NSVMMBT5401WT1G Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NSVMMBT5401WT1G Applications
There are a lot of ON Semiconductor NSVMMBT5401WT1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
