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2SC2712-OTE85LF

2SC2712-OTE85LF

2SC2712-OTE85LF

Toshiba Semiconductor and Storage

2SC2712-OTE85LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SC2712-OTE85LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature125°C TJ
PackagingCut Tape (CT)
Published 2009
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureLOW NOISE
HTS Code8541.21.00.95
Terminal Position DUAL
Terminal FormGULL WING
Reach Compliance Code unknown
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Transition Frequency 80MHz
Frequency - Transition 80MHz
RoHS StatusRoHS Compliant
In-Stock:40883 items

Pricing & Ordering

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2SC2712-OTE85LF Product Details

2SC2712-OTE85LF Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 2mA 6V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.The device has a 50V maximal voltage - Collector Emitter Breakdown.

2SC2712-OTE85LF Features


the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 80MHz

2SC2712-OTE85LF Applications


There are a lot of Toshiba Semiconductor and Storage 2SC2712-OTE85LF applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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