NSV2029M3T5G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
NSV2029M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
NSV2029M3T5G Applications
There are a lot of ON Semiconductor NSV2029M3T5G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
