BSP 52 E6327 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 500mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1mA, 1A.200MHz is present in the transition frequency.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
BSP 52 E6327 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
a transition frequency of 200MHz
BSP 52 E6327 Applications
There are a lot of Infineon Technologies BSP 52 E6327 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver