2SC5707-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.A collector emitter saturation voltage of 240mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 240mV @ 175mA, 3.5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A breakdown input voltage of 50V volts can be used.In extreme cases, the collector current can be as low as 8A volts.
2SC5707-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 240mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V
2SC5707-TL-E Applications
There are a lot of ON Semiconductor 2SC5707-TL-E applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
