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TIP121TU

TIP121TU

TIP121TU

ON Semiconductor

TIP121TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP121TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.214g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation2W
Current Rating5A
Base Part Number TIP121
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation2W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A
Collector Emitter Breakdown Voltage80V
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9165 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.70000$0.7
10$0.62000$6.2
100$0.47550$47.55
500$0.37590$187.95

TIP121TU Product Details

TIP121TU Overview


In this device, the DC current gain is 1000 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

TIP121TU Features


the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A

TIP121TU Applications


There are a lot of ON Semiconductor TIP121TU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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