SMMBTA06LT1G Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The base voltage of the emitter can be kept at 4V to achieve high efficiency.A transition frequency of 100MHz is present in the part.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
SMMBTA06LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
SMMBTA06LT1G Applications
There are a lot of ON Semiconductor SMMBTA06LT1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
