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NJD1718T4G

NJD1718T4G

NJD1718T4G

ON Semiconductor

NJD1718T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJD1718T4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation1.68W
Terminal FormGULL WING
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 1.68W
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Collector Emitter Breakdown Voltage50V
Transition Frequency 80MHz
Max Breakdown Voltage 50V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -5V
hFE Min 70
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7409 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.428880$1.42888
10$1.348000$13.48
100$1.271698$127.1698
500$1.199715$599.8575
1000$1.131807$1131.807

NJD1718T4G Product Details

NJD1718T4G Overview


In this device, the DC current gain is 70 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at -5V can result in a high level of efficiency.80MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Collector current can be as low as 2A volts at its maximum.

NJD1718T4G Features


the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz

NJD1718T4G Applications


There are a lot of ON Semiconductor NJD1718T4G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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