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BCX5416H6327XTSA1

BCX5416H6327XTSA1

BCX5416H6327XTSA1

Infineon Technologies

BCX5416H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX5416H6327XTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation2W
Configuration Single
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage45V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 45V
RoHS StatusROHS3 Compliant
In-Stock:39224 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.914568$0.914568
10$0.862800$8.628
100$0.813962$81.3962
500$0.767889$383.9445
1000$0.724424$724.424

BCX5416H6327XTSA1 Product Details

BCX5416H6327XTSA1 Overview


DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.In extreme cases, the collector current can be as low as 1A volts.

BCX5416H6327XTSA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCX5416H6327XTSA1 Applications


There are a lot of Infineon Technologies BCX5416H6327XTSA1 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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