2SC3332T Overview
In this device, the DC current gain is 200 @ 100mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 25mA, 250mA.The emitter base voltage can be kept at -6V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Maximum collector currents can be below 700mA volts.
2SC3332T Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 400mV @ 25mA, 250mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SC3332T Applications
There are a lot of ON Semiconductor 2SC3332T applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
