Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MJH11021G

MJH11021G

MJH11021G

ON Semiconductor

MJH11021G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJH11021G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -250V
Max Power Dissipation150W
Peak Reflow Temperature (Cel) 260
Current Rating-15A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 10A 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 4V @ 150mA, 15A
Collector Emitter Breakdown Voltage250V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage2.5V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 15A
Height 12.2mm
Length 15.2mm
Width 4.9mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1509 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.49000$4.49
30$3.83467$115.0401
120$3.34133$400.9596
510$2.86441$1460.8491

MJH11021G Product Details

MJH11021G Overview


In this device, the DC current gain is 400 @ 10A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.When VCE saturation is 4V @ 150mA, 15A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 15A for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.There is a transition frequency of 3MHz in the part.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

MJH11021G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 3MHz

MJH11021G Applications


There are a lot of ON Semiconductor MJH11021G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News