NGTB30N60IHLWG Description
NGTB30N60IHLWG transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NGTB30N60IHLWG MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor NGTB30N60IHLWG has the common source configuration.
NGTB30N60IHLWG Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
NGTB30N60IHLWG Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
