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STGW30NC120HD

STGW30NC120HD

STGW30NC120HD

STMicroelectronics

STGW30NC120HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW30NC120HD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation220W
Current Rating30A
Base Part Number STGW30
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation220W
Input Type Standard
Turn On Delay Time29 ns
Transistor Application POWER CONTROL
Rise Time11ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 275 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
Reverse Recovery Time 152ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2.75V
Turn On Time41 ns
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A
Continuous Collector Current 30A
Turn Off Time-Nom (toff) 928 ns
Gate Charge110nC
Td (on/off) @ 25°C 29ns/275ns
Switching Energy 1.66mJ (on), 4.44mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1451 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.63000$3.63
30$3.08067$92.4201
120$2.66992$320.3904
510$2.27286$1159.1586

STGW30NC120HD Product Details

STGW30NC120HD Description


STMicroelectronics has developed an enhanced family of IGBTs with remarkable performance using the latest high voltage technology based on its proprietary strip layout. STGW30NC120HD identifies a family optimized for high-frequency applications in order to achieve extremely high switching performance (low voltage drop) while keeping a low tfall.



STGW30NC120HD Features


  • On-losses are kept to a minimum.

  • On-voltage drop is minimal (Vcesat)

  • Capacity for high current

  • Input impedance is high (voltage driven)

  • a low entry fee

  • Soft switching applications are ideal.



STGW30NC120HD Applications


Switching applications




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