HGTG30N60A4D Description
The HGTG30N60A4D is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss.
HGTG30N60A4D Features
? 390 V, 30 A operation at >100 kHz
? 390 V, 18 A, 200 kHz operation
? SOA Switching Capability of 600 Volts
? At TJ = 125°C, the typical fall time is 60 ns.
? Low Loss of Conduction
? SaberTM Model with Temperature Compensation
? This device is free of lead.
HGTG30N60A4D Applications
Switching applications
