IKW30N60H3FKSA1 Description
The IKW30N60H3FKSA1 is a High-speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IKW30N60H3FKSA1 Features
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Very low VCEsat
Low EMI
Very soft, fast recovery anti-parallel diode
IKW30N60H3FKSA1 Applications
Uninterruptible power supplies
Welding converters
Converters with high switching frequency
Switched Mode Power Supply
AC and DC motor drives
