STGW75M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW75M65DF2 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
30 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
M
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
STGW75
Input Type
Standard
Power - Max
468W
Reverse Recovery Time
165ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
120A
Test Condition
400V, 75A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
IGBT Type
Trench Field Stop
Gate Charge
225nC
Current - Collector Pulsed (Icm)
225A
Td (on/off) @ 25°C
47ns/125ns
Switching Energy
690μJ (on), 2.54mJ (off)
RoHS Status
ROHS3 Compliant
In-Stock:1198 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.19000
$6.19
10
$5.59300
$55.93
100
$4.65400
$465.4
600
$4.02063
$2412.378
STGW75M65DF2 Product Details
STGW75M65DF2 Description
The STGW75M65DF2 is an IGBT built using a patented trench gate field-stop structure. The STGW75M65DF2 is an IGBT of the M series that provides an optimal mix of inverter system performance and efficiency where low-loss and short-circuit functionality are critical. Furthermore, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.
STGW75M65DF2 Features
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
STGW75M65DF2 Applications
General-purpose inverter
Motor control
UPS
PFC
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