NGB8207ANT4G Description
For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.
NGB8207ANT4G Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy ? 500 mJ
Gate Resistor (RG) = 70
This is a Pb?Free Device
NGB8207ANT4G Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
