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IRG4PC30FPBF

IRG4PC30FPBF

IRG4PC30FPBF

Infineon Technologies

IRG4PC30FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC30FPBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2000
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation100W
Terminal Position SINGLE
Current Rating31A
Number of Elements 1
Element ConfigurationDual
Power Dissipation100W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time15ns
Drain to Source Voltage (Vdss) 250V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 31A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage600V
Max Dual Supply Voltage250V
Collector Emitter Saturation Voltage1.59V
Turn On Time36 ns
Max Forward Surge Current (Ifsm) 31A
Test Condition 480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 17A
Turn Off Time-Nom (toff) 640 ns
Gate Charge51nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 21ns/200ns
Switching Energy 230μJ (on), 1.18mJ (off)
Fall Time-Max (tf) 270ns
Height 20.2946mm
Length 15.875mm
Width 5.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3632 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$17.400000$17.4
10$16.415094$164.15094
100$15.485938$1548.5938
500$14.609376$7304.688
1000$13.782430$13782.43

IRG4PC30FPBF Product Details

IRG4PC30FPBF Description


The IRG4PC30FPBF is a 600v insulated gate bipolar transistor. The Infineon IRG4PC30FPBF is designed as a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. The Operating and Storage Temperature Range is between -55 and 150℃. And the Amplifier IRG4PC30FPBF is in the TO-247AC package with 100W power dissipation.



IRG4PC30FPBF Features


Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).

Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than Generation 3

Industry-standard TO-247AC package

Lead-Free



IRG4PC30FPBF Applications


Automotive

Infotainment & cluster

Communications equipment

Wired networking

Industrial

Electronic point of sale (EPOS)


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