NDT452AP Description
The NDT452AP is a P-channel logic level enhancement mode Field-Effect Transistor using high cell density and DMOS technology. This very high-density process has been specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT452AP is particularly suited for low voltage applications such as notebook computer power management and DC motor control.
NDT452AP Features
-RDS(ON) = 0.065 Ω @ VGS = -10V
-RDS(ON) = 0.1 Ω @ VGS = -4.5V
High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
Gate Source Voltage: +20v
Operating and Storage Temperature Range: -65 to 150°C
NDT452AP Applications
