Name: IPB120P04P4L03ATMA1
Brand: Infineon Technologies
SKU: IPB120P04P4L03ATMA1
Price: 4.14000 USD
Availability: InStock

new-10%

IPB120P04P4L03ATMA1

Manufacturer part number:IPB120P04P4L03ATMA1

Manufacturer:Infineon Technologies

Description:IPB120P04P4L03ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPB120P04P4L03ATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	136W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	136W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	3.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 340μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	234nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	57 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	-120A
Threshold Voltage	-1.7V
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	-40V
Drain-source On Resistance-Max	0.0052Ohm
Drain to Source Breakdown Voltage	-40V
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	78 mJ
Max Junction Temperature (Tj)	175°C
Height	4.7mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

IPB120P04P4L03ATMA1 Product Details

IPB120P04P4L03ATMA1 Description

The IPB120P04P4L03ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET with minimal switching and conduction power losses for maximum thermal efficiency.