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NTB65N02RT4G

NTB65N02RT4G

NTB65N02RT4G

ON Semiconductor

MOSFET N-CH 25V 7.6A D2PAK

SOT-23

NTB65N02RT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating65A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.04W Ta 62.5W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1.86W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 4.5V
Rise Time53ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 7.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0105Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 60 mJ
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:21097 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.524344$0.524344
10$0.494664$4.94664
100$0.466664$46.6664
500$0.440249$220.1245
1000$0.415330$415.33

About NTB65N02RT4G

The NTB65N02RT4G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 25V 7.6A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTB65N02RT4G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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