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STW56N60DM2

STW56N60DM2

STW56N60DM2

STMicroelectronics

STW56N60DM2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW56N60DM2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Series MDmesh™ DM2
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STW56N
Power Dissipation-Max 360W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 50A
Threshold Voltage 4V
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:591 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.00000$11
30$9.02000$270.6
120$8.14000$976.8
510$6.82000$3478.2

STW56N60DM2 Product Details

STW56N60DM2 Description


The MDmeshTM DM2 rapid recovery diode series includes this STW56N60DM2. It features a very low recovery charge (Qrr) and time (trr), as well as a very low RDS(on), making it perfect for bridge topologies and ZVS phase-shift converters.



STW56N60DM2 Features


? Body diode with a quick recovery time


? Input capacitance and gate charge are extremely low.


? Relatively low on-resistance


? Avalanche-proofed to the nth degree


? Extremely high dv/dt abrasion resistance


? Protected by a zener



STW56N60DM2 Applications


Switching applications


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