Name: SQ2364EES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2364EES-T1_GE3
Price: 0.70000 USD
Availability: InStock

new-10%

SQ2364EES-T1_GE3

Manufacturer part number:SQ2364EES-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 240mOhm @ 2A, 4.5V ±8V 330pF @ 25V 2.5nC @ 4.5V 60V TO-236-3, SC-59, SOT-23-3

Case Package:SOT-23

Datasheet:SQ2364EES-T1_GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
RoHS Status	ROHS3 Compliant

SQ2364EES-T1_GE3 Product Details

SQ2364EES-T1_GE3 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 330pF @ 25V maximal input capacitance.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4.5V).