Name: MTY100N10E
Brand: ON Semiconductor
SKU: MTY100N10E
Availability: InStock

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MTY100N10E

Manufacturer part number:MTY100N10E

Manufacturer:ON Semiconductor

Description:MTY100N10E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTY100N10E Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Powers
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	100mA
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10640pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	378nC @ 10V
Rise Time	490ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	100A
Drain-source On Resistance-Max	0.011Ohm
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	250 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

MTY100N10E Product Details

MTY100N10E Description

MTY100N10E is a 100v N?Channel Power MOSFET. The onsemi MTY100N10E is designed to withstand high energy in the avalanche and commutation modes. This new energy-efficient design also offers a drain?to?source diode with a fast recovery time. MTY100N10E is designed for high voltage, high-speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer an additional safety margin against unexpected voltage transients.