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IRF1010NLPBF

IRF1010NLPBF

IRF1010NLPBF

Infineon Technologies

MOSFET N-CH 55V 85A TO-262

SOT-23

IRF1010NLPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2004
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 180W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:2818 items

Pricing & Ordering

QuantityUnit PriceExt. Price
400$1.61000$644

About IRF1010NLPBF

The IRF1010NLPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 55V 85A TO-262.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF1010NLPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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