Name: IRFR2405PBF
Brand: Infineon Technologies
SKU: IRFR2405PBF
Availability: InStock

IRFR2405PBF

Manufacturer part number:IRFR2405PBF

Manufacturer:Infineon Technologies

Description:IRFR2405PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFR2405PBF Datasheet PDF

RoHs Status:non-compliant

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
ECCN Code	EAR99
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	56A
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Power Dissipation	110W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16m Ω @ 34A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2430pF @ 25V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	78 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	56A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	93 ns
Nominal Vgs	4 V
Height	2.3876mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRFR2405PBF Product Details

IRFR2405PBF Description

International Rectifier's Seventh Generation HEXFET? Power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for.

The D-Pak is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In a typical surface mount, power dissipation values of up to 1.5 watts are possible.