FQPF6N80 Description
The planar stripe, DMOS technology developed by Fairchild is used to create FQPF6N80 N-Channel power field-effect transistors.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. High-efficiency switch mode power supplies work well with FQPF6N80 MOSFETs.
FQPF6N80 Features
Low Crss ( typical 14 pF)
Fast switching
3.3A, 800V, RDS(on) = 1.95? @VGS = 10 V
Low gate charge ( typical 31 nC)
100% avalanche tested
Improved dv/dt capability
FQPF6N80 Applications
