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STD10NM50N

STD10NM50N

STD10NM50N

STMicroelectronics

STMICROELECTRONICS STD10NM50N MOSFET Transistor, N Channel, 7 A, 500 V, 0.53 ohm, 10 V, 3 V

SOT-23

STD10NM50N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series MDmesh™ II
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 630mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STD10
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 70W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation70W
Turn On Delay Time7.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 630m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time4.4ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 7.8 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 28A
DS Breakdown Voltage-Min 500V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4795 items

Pricing & Ordering

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About STD10NM50N

The STD10NM50N from STMicroelectronics is a high-performance microcontroller designed for a wide range of embedded applications. This component features STMICROELECTRONICS STD10NM50N MOSFET Transistor, N Channel, 7 A, 500 V, 0.53 ohm, 10 V, 3 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the STD10NM50N, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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