MPS6717G Overview
This device has a DC current gain of 50 @ 250mA 1V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 250mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.As a result, the part has a transition frequency of 50MHz.When collector current reaches its maximum, it can reach 500mA volts.
MPS6717G Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPS6717G Applications
There are a lot of ON Semiconductor MPS6717G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
