BF517E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 2mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 1mA, 10mA.The base voltage of the emitter can be kept at 2.5V to achieve high efficiency.There is a transition frequency of 2000MHz in the part.In extreme cases, the collector current can be as low as 25mA volts.
BF517E6327HTSA1 Features
the DC current gain for this device is 40 @ 2mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 2.5V
a transition frequency of 2000MHz
BF517E6327HTSA1 Applications
There are a lot of Infineon Technologies BF517E6327HTSA1 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
