2N5089RLRAG Overview
In this device, the DC current gain is 400 @ 100μA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Emitter base voltages of 3V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 50mA.There is a transition frequency of 50MHz in the part.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
2N5089RLRAG Features
the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 50MHz
2N5089RLRAG Applications
There are a lot of ON Semiconductor 2N5089RLRAG applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
