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BC237BRL1

BC237BRL1

BC237BRL1

ON Semiconductor

BC237BRL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC237BRL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureEUROPEAN PART NUMBER
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating100mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BC237
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage200mV
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 150
Continuous Collector Current 100mA
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1801 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$16.478080$16.47808
10$15.545358$155.45358
100$14.665433$1466.5433
500$13.835314$6917.657
1000$13.052183$13052.183

BC237BRL1 Product Details

BC237BRL1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Continuous collector voltage should be kept at 100mA for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.200MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC237BRL1 Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz

BC237BRL1 Applications


There are a lot of ON Semiconductor BC237BRL1 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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