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2SD1407A-Y(F)

2SD1407A-Y(F)

2SD1407A-Y(F)

Toshiba Semiconductor and Storage

TRANS NPN 100V 5A TO220NIS

SOT-23

2SD1407A-Y(F) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature150°C TJ
PackagingTube
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation30W
Element ConfigurationSingle
Gain Bandwidth Product12MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 400mA, 4A
Collector Emitter Breakdown Voltage100V
Current - Collector (Ic) (Max) 5A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1918 items

About 2SD1407A-Y(F)

The 2SD1407A-Y(F) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS NPN 100V 5A TO220NIS.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2SD1407A-Y(F), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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