MMBTA14LT1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 10mA 5V.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 125MHz is present in the part.Maximum collector currents can be below 300mA volts.
MMBTA14LT1 Features
the DC current gain for this device is 10000 @ 10mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMBTA14LT1 Applications
There are a lot of ON Semiconductor MMBTA14LT1 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter