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MMBTA14LT1

MMBTA14LT1

MMBTA14LT1

ON Semiconductor

MMBTA14LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBTA14LT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation225mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating300mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MMBTA14
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation225mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage1.5V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 300mA
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:88446 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.059078$0.059078
500$0.043440$21.72
1000$0.036200$36.2
2000$0.033211$66.422
5000$0.031038$155.19
10000$0.028873$288.73
15000$0.027923$418.845
50000$0.027457$1372.85

MMBTA14LT1 Product Details

MMBTA14LT1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 10mA 5V.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 125MHz is present in the part.Maximum collector currents can be below 300mA volts.

MMBTA14LT1 Features


the DC current gain for this device is 10000 @ 10mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz

MMBTA14LT1 Applications


There are a lot of ON Semiconductor MMBTA14LT1 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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