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BC558BZL1

BC558BZL1

BC558BZL1

ON Semiconductor

BC558BZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC558BZL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2005
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureEUROPEAN PART NUMBER
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating-100mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BC558
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product360MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage30V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 360MHz
Collector Emitter Saturation Voltage-300mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:194265 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.04000$0.04
500$0.0396$19.8
1000$0.0392$39.2
1500$0.0388$58.2
2000$0.0384$76.8
2500$0.038$95

BC558BZL1 Product Details

BC558BZL1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 2mA 5V DC current gain.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.The part has a transition frequency of 360MHz.When collector current reaches its maximum, it can reach 100mA volts.

BC558BZL1 Features


the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 360MHz

BC558BZL1 Applications


There are a lot of ON Semiconductor BC558BZL1 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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