MMBT4124 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).Input voltage breakdown is available at 25V volts.There is no device package available from the supplier for this product.A 25V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 200mA volts can be achieved.
MMBT4124 Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
the supplier device package of SOT-23-3
MMBT4124 Applications
There are a lot of ON Semiconductor MMBT4124 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
