2N5551RL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.Parts of this part have transition frequencies of 100MHz.This device can take an input voltage of 160V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N5551RL1G Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551RL1G Applications
There are a lot of ON Semiconductor 2N5551RL1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
