DCP55-13 Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 200MHz.The breakdown input voltage is 60V volts.Collector current can be as low as 1A volts at its maximum.
DCP55-13 Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
DCP55-13 Applications
There are a lot of Diodes Incorporated DCP55-13 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
