KSC5502TU Overview
In this device, the DC current gain is 12 @ 500mA 2.5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 200mA, 1A.Emitter base voltages of 12V can achieve high levels of efficiency.Collector current can be as low as 2A volts at its maximum.
KSC5502TU Features
the DC current gain for this device is 12 @ 500mA 2.5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
KSC5502TU Applications
There are a lot of ON Semiconductor KSC5502TU applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
