Name: J310G
Brand: ON Semiconductor
SKU: J310G
Availability: InStock

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J310G

Manufacturer part number:J310G

Manufacturer:ON Semiconductor

Description:J310G datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:J310G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Surface Mount	NO
Number of Pins	3
Weight	453.59237mg
Packaging	Bulk
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature	125°C
Min Operating Temperature	-65°C
HTS Code	8541.21.00.75
Subcategory	Other Transistors
Voltage - Rated DC	25V
Max Power Dissipation	350mW
Terminal Position	BOTTOM
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	260
Current Rating	60mA
Frequency	100MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	J310
Pin Count	3
Number of Elements	1
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	350mW
Current - Test	10mA
Transistor Application	AMPLIFIER
Breakdown Voltage	-25V
Drain to Source Voltage (Vdss)	25V
Transistor Type	N-Channel JFET
Gate to Source Voltage (Vgs)	25V
Gain	16dB
FET Technology	JUNCTION
Voltage - Test	10V
Feedback Cap-Max (Crss)	2.5 pF
Height	5.33mm
Length	5.2mm
Width	4.19mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

J310G Product Details

J310G Description

This N-Channel MOSFET is created using the cutting-edge PowerTrench? technology from Fairchild Semiconductor, which was created to reduce the on-state resistance while maintaining good switching performance. These devices are made to give a high level of dv/dt capabilities for the most demanding applications in addition to a significant reduction in on-resistance. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.