Name: MRF1517NT1
Brand: NXP USA Inc.
SKU: MRF1517NT1
Availability: InStock

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MRF1517NT1

Manufacturer part number:MRF1517NT1

Manufacturer:NXP USA Inc.

Description:MRF1517NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:MRF1517NT1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Package / Case	PLD-1.5
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2002
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated	25V
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Current Rating (Amps)	4A
Terminal Position	QUAD
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Frequency	520MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MRF1517
JESD-30 Code	R-PQSO-N4
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
Current - Test	150mA
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
Transistor Type	LDMOS
Gain	14dB
Drain Current-Max (Abs) (ID)	4A
DS Breakdown Voltage-Min	25V
Power - Output	8W
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	62.5W
Voltage - Test	7.5V
RoHS Status	ROHS3 Compliant

MRF1517NT1 Product Details

MRF1517NT1 Description

MRF1517NT1 Mosfet is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes Mosfet MRF1517NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF1517NT1 has the common source configuration.