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PD54008

PD54008

PD54008

STMicroelectronics

PD54008 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website

SOT-23

PD54008 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 3
PackagingTube
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Additional FeatureHIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation73W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating5A
Frequency 500MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD54008
Pin Count2
JESD-30 Code R-PDSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation73W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 25V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Gain 11.5dB
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 25V
Power - Output 8W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 7.5V
RoHS StatusROHS3 Compliant
In-Stock:1634 items

Pricing & Ordering

QuantityUnit PriceExt. Price
400$10.07500$4030

PD54008 Product Details

PD54008 Description

PD54008 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes PD54008 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD54008 has the excellent thermal stability.

PD54008 Features

Gold metalization

Excellent thermal stability

Common source configuration

POUT= 300 W min. with 20 dB gain @ 30 MHz

Thermally enhanced packaging for lower junction temperatures

PD54008 Applications

ISM applications

DC large signal applications


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