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2SK3756(TE12L,F)

2SK3756(TE12L,F)

2SK3756(TE12L,F)

Toshiba Semiconductor and Storage

RF MOSFET Transistors N-Ch Radio Freq 1A 3W 7V VDSS

SOT-23

2SK3756(TE12L,F) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Package / Case TO-243AA
Surface MountYES
PackagingCut Tape (CT)
Published 2009
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Max Power Dissipation3W
Reach Compliance Code unknown
Current Rating1A
Frequency 470MHz
Operating Temperature (Max) 150°C
Configuration Single
Operating ModeENHANCEMENT MODE
Current - Test 200mA
Drain to Source Voltage (Vdss) 7.5V
Transistor Type N-Channel
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 3V
Gain 12dB
Drain Current-Max (Abs) (ID) 1A
Power - Output 32dBm
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 4.5V
RoHS StatusRoHS Compliant
In-Stock:3306 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.72000$1.72
10$1.55400$15.54
100$1.24910$124.91

About 2SK3756(TE12L,F)

The 2SK3756(TE12L,F) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features RF MOSFET Transistors N-Ch Radio Freq 1A 3W 7V VDSS.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2SK3756(TE12L,F), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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