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HGTG40N60A4

HGTG40N60A4

HGTG40N60A4

ON Semiconductor

HGTG40N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGTG40N60A4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 44 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW CONDUCTION LOSS
HTS Code8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation625W
Current Rating40A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time25 ns
Transistor Application POWER CONTROL
Rise Time18ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 145 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.7V
Turn On Time47 ns
Test Condition 390V, 40A, 2.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 40A
Continuous Collector Current 75A
Turn Off Time-Nom (toff) 240 ns
Gate Charge350nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 25ns/145ns
Switching Energy 400μJ (on), 370μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:600 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.79000$11.79
10$10.84000$108.4
450$8.70567$3917.5515
900$8.14400$7329.6

HGTG40N60A4 Product Details

HGTG40N60A4 Description

HGTG40N60A4 IGBT is a MOS-gated switcher that operates the best features of high input impedance. ON Semiconductor HGTG40N60A4 features the high impedance at the input of a MOSFET and the reduced on-state conduction loss that is typical of the bipolar transistor. HGTG40N60A4 circuit is ideal for various high voltage switching applications that operate at moderate frequencies, where the lowest conduction losses can be essential.

HGTG40N60A4 Features

High input impedance

Low Saturation Voltage

Typical Fall Time

Low Conduction Loss

HGTG40N60A4 Applications

Motion Control

Sewing machine

CNC

Motor control

Home appliances


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