STGP4M65DF2 Description
This STGP4M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGP4M65DF2 is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VcE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.
STGP4M65DF2 Features
6 μs of short-circuit withstand time
VcE(sat)= 1.6 V (typ.) @Ic=4A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
STGP4M65DF2 Applications
Motor control
UPS
PFC
