FGH60T65SQD-F155 Description
FGH60T65SQD-F155 is a 650v IGBT. Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor FGH60T65SQD-F155 is in the TO-247-3LD package with 333W power dissipation.
FGH60T65SQD-F155 Features
Max Junction Temperature 175°C
Positive Temperature Co?efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
This Device is Pb?Free and is RoHS Compliant
FGH60T65SQD-F155 Applications
Solar Inverter
UPS
Welder
Telecom
ESS
PFC
