IRGB4056DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGB4056DPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
140W
Number of Elements
1
Element Configuration
Single
Power Dissipation
140W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
40 ns
Transistor Application
POWER CONTROL
Rise Time
17ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
94 ns
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
24A
Reverse Recovery Time
68 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.55V
Turn On Time
48 ns
Test Condition
400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 12A
Turn Off Time-Nom (toff)
143 ns
IGBT Type
Trench
Gate Charge
25nC
Current - Collector Pulsed (Icm)
48A
Td (on/off) @ 25°C
31ns/83ns
Switching Energy
75μJ (on), 225μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
9.02mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:5480 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.41000
$3.41
50
$2.89640
$144.82
100
$2.51020
$251.02
500
$2.13692
$1068.46
IRGB4056DPBF Product Details
IRGB4056DPBF Description
The IRGB4056DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The transistor features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
IRGB4056DPBF Features
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON) Temperature co-efficient
Ultra-fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
IRGB4056DPBF Applications
Consumer Electronics
Alternative Energy
Power Management
Motor Drive
Control
Related Products
Similar Transistors - IGBTs - Single from Infineon Technologies and other manufacturers
