Name: IKZ50N65EH5XKSA1
Brand: Infineon Technologies
SKU: IKZ50N65EH5XKSA1
Price: 7.43000 USD
Availability: InStock

new

IKZ50N65EH5XKSA1

Manufacturer part number:IKZ50N65EH5XKSA1

Manufacturer:Infineon Technologies

Description:IKZ50N65EH5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKZ50N65EH5XKSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-4
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2008
Series	TrenchStop™ 5
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	273W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	273W
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	85A
Reverse Recovery Time	53 ns
Collector Emitter Breakdown Voltage	650V
Turn On Time	27 ns
Test Condition	400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Turn Off Time-Nom (toff)	311 ns
IGBT Type	Trench
Gate Charge	109nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	20ns/250ns
Switching Energy	410μJ (on), 190μJ (off)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IKZ50N65EH5XKSA1 Product Details

IKZ50N65EH5XKSA1 Description

The Infineon Technologies IKZ50N65EH5XKSA1 is a Highspeed 5 IGBT inTRENCHSTOPTM 5 technology copacked with RAPID1 fast and soft antiparallel diode.

IKZ50N65EH5XKSA1 Features

High-speed H5 technology offering
Ultra-low loss switching thanks to Kelvin emitterpinin combination withTRENCHSTOPTM5
Best-in-class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
650V breakdown voltage
Low gate charge QG
IGBT co-packed with RAPID1 fast and soft antiparallel diode
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications